Lower Power Consumption for High Density DRAM Storage
Utilizing Palladium for Addressing Contact Issues of Buried Oxide Thin Film Transistors
Tags: Tokyo Institute of Technology, Japan, Electronics & Robotics, Consumer Goods & Services
Tokyo Tech scientists developed a method using palladium to inject hydrogen into oxide-metal electrode contacts of AOS (amorphous oxide semiconductors) storage devices, reducing contact resistance and enhancing performance. This approach enables the use of amorphous oxide semiconductors in next-generation storage and display technologies by addressing key contact issues. The novel technique significantly lowers power consumption and improves charge carrier mobility, crucial for high-density DRAM and other storage devices. It offers a practical solution for complex nanoscale architectures where traditional methods fall short.
IP Type or Form Factor: Process & Method; Material
TRL: Not specified
Industry or Tech Area: Semiconductors; Home Appliances & Consumer Electronics
