Multi-Element Alloy for Semiconductors: No Annealing Needed
Multi-Element Alloy for Semiconductors: No Annealing Needed
Multicomponent-alloy Material Layer, Method of Manufacturing the Same and Capacitor Structure of Semiconductor Device
Tags: National Cheng Kung University, Taiwan, Electronics & Robotics, Industrial Automation & Manufacturing
This technology introduces a multi-element alloy material layer for semiconductor devices, designed without the need for thermal annealing. It uses quaternary to hexa-dimensional metal elements in specific compositions to achieve desired properties, simplifying the manufacturing process and reducing costs. The alloy material is applied to the capacitance structure of semiconductors, eliminating the need for strict control of temperature and atmosphere during production. Applications include semiconductor manufacturing, particularly in improving capacitor structures. The method increases yield and reduces complexity in production.
IP Type or Form Factor: Patent Granted; Material; Process & Method
TRL: Not specified
Industry or Tech Area: Semiconductors; Manufacturing Technology
