Overcome Limitations of Doping Graphene
Non-Destructive Graphene Doping for Nanoscale Electronics
Tags: National University of Singapore, Singapore, Science & Exploration, Electronics & Robotics
This technology presents a non-destructive method for doping graphene, enhancing its potential in nanoscale electronic applications such as p-n junction diode rectifiers, field-effect transistors, and photodetectors. By using thermally evaporated MoO3 as a dopant, it creates a stable, high-performance surface transfer p-type doping on graphene grown on a SiC wafer, achieving ultra-high hole density and preserving graphene’s integrity. This method addresses conventional challenges, where doping causes defects that degrade graphene’s performance. Applications span various nanoelectronic devices and offer compatibility with standard lithography processes, enabling scalable wafer-level graphene device production. The approach is also adaptable to multiple graphene fabrication methods, expanding its potential uses.
IP Type or Form Factor: Material; Process & Method
TRL: 4 - minimum viable product built in lab
Industry or Tech Area: Nanotechnology; Semiconductors
