Produce Higher Quality, Cheaper Semiconductor Substrates
Produce Higher Quality, Cheaper Semiconductor Substrates
Cheaper, Higher Quality GaN Freestanding Substrates Using N Polarity Control
Tags: Tohoku University, Japan, Electronics & Robotics
This technique produces high-quality nitride semiconductor substrates at a lower cost using SCAlMgO4 seed crystals, reducing dislocation density and enhancing crystal size and thickness. Compared to traditional methods, it yields substrates with lower dislocation density and better cleavage properties, simplifying semiconductor exfoliation. The process involves expanding crystal diameter through N-polar growth and further nitriding after oxidizing the surface. It promises cheaper, high-quality substrates for optical devices and high-power transistors, inviting companies to explore commercialization.
IP Type or Form Factor: Discovery & Research; Material
TRL: Not specified
Industry or Tech Area: Semiconductors; Photonics & Optoelectronics
